p - c h a n n e l e n h a n c e m e n t m o d e m o s f e t c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 2 9 0 1 c g f e a t u r e s a p p l i c a t i o n s p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n p - c h a n n e l m o s f e t - 2 0 v / - 1 0 a , r d s ( o n ) = 9 m w ( t y p . ) @ v g s = - 4 . 5 v r d s ( o n ) = 1 2 . 5 m w ( t y p . ) @ v g s = - 2 . 5 v r d s ( o n ) = 1 8 m w ( t y p . ) @ v g s = - 1 . 8 v s u p e r h i g h d e n s e c e l l d e s i g n r e l i a b l e a n d r u g g e d l e a d f r e e a n d g r e e n d e v i c e s a v a i l a b l e ( r o h s c o m p l i a n t ) power management in notebook computer, portable equipment and battery powered systems. t o p v i e w o f j s o t - 8 s s s g d d d d g d s s s d d d (1~3) (5~8) (4) n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a - t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j - s t d - 0 2 0 c f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . a n p e c d e f i n e s ? g r e e n ? t o m e a n l e a d - f r e e ( r o h s c o m p l i a n t ) a n d h a l o g e n f r e e ( b r o r c l d o e s n o t e x c e e d 9 0 0 p p m b y w e i g h t i n h o m o g e n e o u s m a t e r i a l a n d t o t a l o f b r a n d c l d o e s n o t e x c e e d 1 5 0 0 p p m b y w e i g h t ) . apm2901 handling code temperature range package code package code cg : jsot-8 operating junction temperature range c : -55 to 150 o c handling code tr : tape & reel assembly material g : halogen and lead free device apm2901 cg : m2901 xxxxx xxxxx - date code assembly material
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 2 a p m 2 9 0 1 c g a b s o l u t e m a x i m u m r a t i n g s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) symbol parameter rating unit v dss drain - source voltage - 20 v gss gate - source voltage 12 v i d * c ontinuous drain current - 10 i dm * 300 m s pulsed drain current v gs = - 4.5 v - 40 a i s * diode c ontinuous f orward c urrent - 2 a t j maximum junction temperature 15 0 t stg storage temperature range - 55 to 150 c t a =25 c 1.25 p d * maximum power dissipation t a =100 c 0.5 w r q ja * thermal resistance - junction to ambient 100 c / w note : *surface mounted on 1in 2 pad area, t 10sec. apm 2901 cg symbol parameter test condition s min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a - 20 - - v v ds = - 16 v, v gs =0v - - - 1 i dss zero gate voltage drain current t j =85 c - - - 30 m a v gs(th) ga te threshold voltage v ds =v gs , i ds = - 250 m a - 0.5 - 0.7 - 1 v i gss gate leakage current v gs =1 2 v, v ds =0v - - 100 n a v gs = - 4.5 v, i ds = - 10 a - 9 11 v gs = - 2. 5v, i ds = - 8 a - 12.5 17 r ds(on) a drain - source on - state resistance v gs = - 1.8 v, i ds = - 3 a - 18 27 m w diode characteristics v sd a diode forward voltage i sd = - 2 a, v gs =0v - - 0.7 - 1.3 v t rr reverse recovery time - 33 - ns q rr reverse recovery charge i sd = - 10 a, di sd /dt =10 0a/ m s - 17 - n c
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 3 a p m 2 9 0 1 c g e l e c t r i c a l c h a r a c t e r i s t i c s ( c o n t . ) ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) apm 2901c g symbol parameter test condition s min. typ. max. unit dynamic characteristics b r g gate r esistance v gs = 0 v,v ds =0v ,f=1mhz - 4 .2 - w c iss input capacitance - 3700 - c oss output capacitance - 760 - c rs s reverse transfer capacitance v gs =0v, v ds = - 1 0 v, f requency =1.0mhz - 570 - pf t d(on) turn - on delay time - 16 30 t r turn - on rise time - 17 32 t d(off) turn - off delay time - 133 240 t f turn - off fall time v dd = - 10 v, r l =1 0 w , i d s = - 1a, v gen = - 4.5v , r g =6 w - 59 107 ns gate charge characterist ics b q g total gate charge - 40 56 q gs gate - source charge - 5.4 - q gd gate - drain charge v ds = - 10 v, v gs = - 4.5 v, i d s = - 10a - 11.4 - nc note a : pulse test ; pulse width 3 00 m s, duty cycle 2%. note b : guaranteed by design, not subject to production testi ng.
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 4 a p m 2 9 0 1 c g t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a v d s - d r a i n - s o u r c e v o l t a g e ( v ) t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) i d - drain current (a) normalized transient thermal resistance 0 20 40 60 80 100 120 140 160 0.0 0.3 0.6 0.9 1.2 1.5 t a =25 o c 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 t a =25 o c,v g =-4.5v 0.01 0.1 1 10 100 0.01 0.1 1 10 100 rds(on) limit 1s t a =25 o c 10ms 300 m s 1ms 100ms dc 1e-4 1e-3 0.01 0.1 1 10 30 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r q ja : 100 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 5 a p m 2 9 0 1 c g r ds(on) - on - resistance (m w ) d r a i n - s o u r c e o n r e s i s t a n c e i d - d r a i n c u r r e n t ( a ) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s d r a i n - s o u r c e o n r e s i s t a n c e v g s - g a t e - s o u r c e v o l t a g e ( v ) r ds(on) - on - resistance (m w ) normalized threshold voltage t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . ) 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 v gs =-1.8v v gs =-4.5v v gs =-2.5v 0 1 2 3 4 5 6 7 8 9 10 4 6 8 10 12 14 16 18 20 22 24 i d = -10a -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i ds = -250 m a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 35 40 -1.5v v gs =-2,-2.5,-3,-4,-5,-6,-7,-8,-9,-10v
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 6 a p m 2 9 0 1 c g v d s - d r a i n - s o u r c e v o l t a g e ( v ) d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) c - capacitance (pf) v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d i s - source current (a) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) v gs - gate - source voltage (v) t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . ) -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r on @t j =25 o c: 9m w v gs = -4.5v i ds = -10a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 40 t j =150 o c t j =25 o c 0 4 8 12 16 20 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 frequency=1mhz crss coss ciss 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 7 8 9 10 v ds = -10v i d = -10a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 7 a p m 2 9 0 1 c g p a c k a g e i n f o r m a t i o n j s o t - 8 e 1 e b d a 2 a 1 a e 2 c e l k s y m b o l min. max. 1.10 0.01 0.25 0.40 0.10 0.20 2.95 3.10 2.50 3.00 2.30 0.30 0.60 a a1 b c d e e1 e2 e l millimeters a2 0.92 1.00 0.65 bsc jsot-8 2.65 3.05 min. max. inches 0.043 0.000 0.026 bsc 0.036 0.039 0.010 0.016 0.004 0.008 0.116 0.122 0.098 0.118 0.091 0.104 0.120 0.012 0.024 0.93 0.037 0.10 0.004 2.50 0.098 0 0 8 0 8 note: 1. follow gem2928 8j 2. dimension d, d1, and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed 10 mil.
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 8 a p m 2 9 0 1 c g c a r r i e r t a p e & r e e l d i m e n s i o n s a e 1 a b w f t p0 od0 b a0 p2 k0 b 0 section b-b section a-a od1 p1 h t1 a d application a h t1 c d d w e1 f 178.0 ? 2.00 50 min. 8.4+2.00 - 0.00 13.0+0.50 - 0.20 1.5 min. 20.2 min. 8.0 ? 0.30 1.75 ? 0.10 3.5 ? 0.05 p 0 p1 p 2 d 0 d1 t a 0 b 0 k 0 jsot - 8 4.0 ? 0.10 4.0 ? 0.10 2.0 ? 0.05 1.5+0.10 - 0.00 1.0 min. 0.6+0.00 - 0.40 3.20 ? 0.20 3.10 ? 0.20 1.50 ? 0.20 (mm) d e v i c e s p e r u n i t package type unit quantity jsot - 8 tape & reel 3000
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 9 a p m 2 9 0 1 c g t a p i n g d i r e c t i o n i n f o r m a t i o n j s o t - 8 r e f l o w c o n d i t i o n ( i r / c o n v e c t i o n o r v p r r e f l o w ) t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 t e m p e r a t u r e time critical zone t l to t p r e l i a b i l i t y t e s t p r o g r a m test item method description solderability mil - std - 883d - 2003 245 c, 5 sec holt mil - std - 883d - 1005.7 1000 hrs bias @125 c pct jesd - 22 - b, a102 168 hrs, 100 % rh, 121 c tst mil - std - 883d - 1011.9 - 65 c~150 c, 200 cycles user direction of feed xxxxx maaaa maaaa xxxxx maaaa xxxxx maaaa xxxxx maaaa xxxxx maaaa xxxxx maaaa xxxxx
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - d e c . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 0 a p m 2 9 0 1 c g profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat - temperature min (tsmin) - temperature max (tsmax) - time (min to max) (ts) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 180 seconds time maintained above: - temperature (t l ) - time (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak /classification temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10 - 30 seconds 20 - 40 seconds ramp - down rate 6 c/sec ond max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note: all temperatures refer to topside of the package. measured on the body surface. c l a s s i f i c a t i o n r e f l o w p r o f i l e s table 2. pb - free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 3 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. table 1. snpb eutectic process ? package peak reflow temperature s package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 240 +0/ - 5 c 225 +0/ - 5 c 3 2.5 mm 225 +0/ - 5 c 225 +0/ - 5 c c u s t o m e r s e r v i c e anpec electronics corp. head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 2f, no. 11, lane 218, sec 2 jhongsing rd., sindain city, taipei county 23146, taiwan tel : 886-2-2910-3838 fax : 886-2-2917-3838
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